高频半导体集成电路

High frequency semiconductor integrated circuit

Abstract

The present invention relates to a high frequency semiconductor integrated circuit. According to one embodiment, one end of a first line is connected to a first terminal. A first resonance circuit has one end connected to the other end of the first line. One end of a second line is connected with the other end of the first line. A first transistor has one end connected to the other end of the second line and the other end connected to a second terminal, and a control terminal is configured to receive a first control signal. A second transistor has one end connected to the second terminal, and a second control signal is inputted to the control terminal. One end of a third line is connected to the other end of the second transistor. A second resonance circuit has one end connected to the other end of the third line. A fourth line has one end connected to the other end of the third line, and the other end connected to a third terminal.
本发明涉及一种高频半导体集成电路。根据本发明的一实施方式,第1线路的一端连接于第1端子。第1谐振电路的一端连接于第1线路的另一端。第2线路的一端连接于第1线路的另一端。第1晶体管的一端连接于第2线路的另一端,且另一端连接于第2端子,对控制端子输入第1控制信号。第2晶体管的一端连接于第2端子,对控制端子输入第2控制信号。第3线路的一端连接于第2晶体管的另一端。第2谐振电路的一端连接于第3线路的另一端。第4线路的一端连接于第3线路的另一端,且另一端连接于第3端子。

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